Customization: | Available |
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Type: | Normal Pressure Transmitter |
Structure Type: | Diffused Silicon Pressure Transmitter |
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Pressure Range | 0~50kPa…40MPa (Gauge). 0~50kPa…10MPa (Absolute) |
Temperature Range | -40~100ºC Note: Supports customized intermediate range, such as 0~80ºC, etc. |
Measuring Medium | Various liquids, gases and various compatible with contact materials |
Output Signal | RS485 |
Power Supply | Vs=3.1~8VDC (built-in lithium battery ER14250, 3.6V 1200mAh) Vs=5VDC (external power supply) Vs=24VDC (external power supply |
Accuracy | ±0.5%FS (pressure channel, normal), ±0.2%FS (pressure channel, customized) ±0.4ºC(temperature channel) |
Long-term stability | ±0.25%FS/year |
Power Consumption | |
Standby current | <20uA |
Acquisition cycle | 0~65535 seconds |
Power Consumption |
The sensor acquisition cycle is 1s, and the power consumption is about 300uA The sensor acquisition period is 3s, and the power consumption is about 110uA Sensor acquisition cycle 5s, power consumption about 75uA ...... Note:The longer the collection cycle, the lower the power consumption |
Compensation temperature | -10~70ºC |
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HIGHLIGHTS The temperature sensor is a built-in high-precision PT100 or PT1000. The measurement position is close to the medium to be measured, with a small temperature difference and a fast response. Temperature measurement also supports a probe structure to penetrate into the center of the temperature to be measured. The pressure measurement channel uses a high-stability and high-precision silicon piezoresistive pressure sensing core. The process pressure acts directly on the isolation diaphragm, causing the diaphragm to deform. The signal conditioning circuit converts the MEMS chip signal into a standard current or voltage signal output. |
Part | Material |
Pressure port | SS304 |
SS316L | |
Pressure sensor | SS316L |
O-ring | FKM |
Display Shell | Aluminum alloy |