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| Customization: | Available |
|---|---|
| Type: | Normal Pressure Transmitter |
| Structure Type: | Diffused Silicon Pressure Transmitter |
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| Pressure Range | -100kPa…0~50kPa…40MPa (Gauge) 0~50kPa…40MPa (Absolute) |
| Overload Pressure | 1.5 times full scale |
| Temperature Range | -40~100ºC Note: Supports customized intermediate range, such as 0~80ºC, etc. |
| Measuring Medium | Various liquids, gases and various compatible with contact materials |
| Output Signal/Power Supply | Pressure: 4~20mADC Temperature: 4~20mADC Vs=24 VDC (9~30VDC) |
| Accuracy | Pressure: ±0.5%FS standard.; ±0.2%FS optional Temperature: ±0.4ºC |
| Compensation temperature (for pressure measure) | -10~70ºC |
| Zero-point Temperature Coefficient (for pressure measure) |
±1.5%FS reference 30ºC, within temperature compensation range |
| Full scale Temperature Coefficient (for pressure measure) |
±1.5%FS reference 30ºC, within temperature compensation range |
| Medium Temperature | -40~100ºC |
| Temperature Resistance of LED | -30~70ºC |
| Storage Temperature | -30~70ºC |
| Protection grade | IP65 |
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HIGHLIGHTS The temperature sensor is a built-in high-precision PT100 or PT1000. The measurement position is close to the medium to be measured, with a small temperature difference and a fast response. Temperature measurement also supports a probe structure to penetrate into the center of the temperature to be measured. The pressure measurement channel uses a high-stability and high-precision silicon piezoresistive pressure sensing core. The process pressure acts directly on the isolation diaphragm, causing the diaphragm to deform. The signal conditioning circuit converts the MEMS chip signal into a standard current or voltage signal output. |
| Part | Material |
| Pressure port | SS304(default) |
| SS316L | |
| Pressure sensor | SS316L(default) |
| O-ring | FKM |
| Display Shell | Aluminum alloy ADC12 (default) |





